JPH0719143Y2 - ガス導入装置を有するcvd装置 - Google Patents
ガス導入装置を有するcvd装置Info
- Publication number
- JPH0719143Y2 JPH0719143Y2 JP1990044038U JP4403890U JPH0719143Y2 JP H0719143 Y2 JPH0719143 Y2 JP H0719143Y2 JP 1990044038 U JP1990044038 U JP 1990044038U JP 4403890 U JP4403890 U JP 4403890U JP H0719143 Y2 JPH0719143 Y2 JP H0719143Y2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- injector
- reaction tube
- holder
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990044038U JPH0719143Y2 (ja) | 1990-04-26 | 1990-04-26 | ガス導入装置を有するcvd装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990044038U JPH0719143Y2 (ja) | 1990-04-26 | 1990-04-26 | ガス導入装置を有するcvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH044736U JPH044736U (en]) | 1992-01-16 |
JPH0719143Y2 true JPH0719143Y2 (ja) | 1995-05-01 |
Family
ID=31556980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990044038U Expired - Lifetime JPH0719143Y2 (ja) | 1990-04-26 | 1990-04-26 | ガス導入装置を有するcvd装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0719143Y2 (en]) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110232568A1 (en) * | 2009-09-25 | 2011-09-29 | Ferrotec (Usa) Corporation | Hybrid gas injector |
US20170167023A1 (en) * | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100230151B1 (ko) * | 1996-07-23 | 1999-11-15 | 윤종용 | 저압 화학기상증착 설비의 종형 확산로에서 사용되는 가스노즐 고정장치 |
JP5237133B2 (ja) * | 2008-02-20 | 2013-07-17 | 株式会社日立国際電気 | 基板処理装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62168638U (en]) * | 1986-04-17 | 1987-10-26 | ||
JPS62190335U (en]) * | 1986-05-23 | 1987-12-03 |
-
1990
- 1990-04-26 JP JP1990044038U patent/JPH0719143Y2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110232568A1 (en) * | 2009-09-25 | 2011-09-29 | Ferrotec (Usa) Corporation | Hybrid gas injector |
US20170167023A1 (en) * | 2015-12-09 | 2017-06-15 | Lam Research Corporation | Silicon or silicon carbide gas injector for substrate processing systems |
Also Published As
Publication number | Publication date |
---|---|
JPH044736U (en]) | 1992-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100435119B1 (ko) | 매엽식처리장치 | |
US5192371A (en) | Substrate supporting apparatus for a CVD apparatus | |
US6039812A (en) | Device for epitaxially growing objects and method for such a growth | |
CN100414004C (zh) | 通过气相淀积制备单晶的设备和方法 | |
TW201945580A (zh) | 基材製程裝置及方法 | |
TWI589724B (zh) | 熱絲化學氣相沉積腔室之噴頭設計 | |
US5458685A (en) | Vertical heat treatment apparatus | |
KR20090066247A (ko) | 증착 장치 | |
JP6792083B2 (ja) | 気相成長装置、及び、気相成長方法 | |
JP3338884B2 (ja) | 半導体処理装置 | |
JP3115335B2 (ja) | 融液補給装置 | |
WO2020039809A1 (ja) | 気相成長装置 | |
US5746824A (en) | Method and apparatus for producing a single crystal | |
KR100296998B1 (ko) | 반도체 제조장치 | |
US3704987A (en) | Device for the epitaxialy deposition of semiconductor material | |
JPH0719143Y2 (ja) | ガス導入装置を有するcvd装置 | |
WO2002091448A1 (fr) | Dispositif de croissance a phase gazeuse | |
US4582020A (en) | Chemical vapor deposition wafer boat | |
US6194030B1 (en) | Chemical vapor deposition velocity control apparatus | |
KR20150071850A (ko) | 가스배출관 및 이를 포함하는 잉곳성장장치 | |
US6027569A (en) | Gas injection systems for a LPCVD furnace | |
JP2000349030A (ja) | 気相反応装置 | |
JP6052051B2 (ja) | 炭化珪素単結晶の製造装置 | |
JPS6168393A (ja) | ホツトウオ−ル形エピタキシヤル成長装置 | |
JP3084881B2 (ja) | 有機金属気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |